Arg-i Bam is considered the world’s biggest and oldest castle made of clay and sun-baked bricks. The castle served as a complete city and was habitable up to the 20th century. In this article, after giving a brief historical account of Arg-i Bam, the author both examines and criticizes its architectural components and characteristics on the basis of recognizing the skeletal features of the city, as well as those of other contemporary-built cities. The goal of this research is to make clear the architectural style (s) inside the city so as to shed light on the historical period when it was established and on its cultural and social effects on the era. From the author’s viewpoint, knowing this and availing from the advantages of this kind of architecture, when adapted to the social conditions of that era, can help us in building Persian-originated constructions.

Background: Arg is a proto-oncogene and a member of a tyrosine kinase proteins family. It has great importance in many cancers, but there is no conclusive evidence on its role in DLBCL staging. The aim of this study was to evaluate importance of Arg, in this cancer's staging.Methods: Sixteen DLBCL and 4 reactive lymph node (as control group) samples, after staging using Ann Arbor staging system, were used in this study. Formaldehyde fixed paraffin embedded blocks were prepared from the samples. After the sectioning, all samples were hybridized with primary antibodies against Arg and GAPDH (as control house keep keeping gene). The slides were then washed and hybridized with fluorescently labeled secondary antibodies (Arg, green labeled and GAPDH, red). After capturing the pictures using CCD camera, the intensity of green and red colures was measured and the ratio between green/red, that demonstrate changes in Arg expression, were calculated.Findings: The mean ratio of green/red (Arg expression) was significantly different between reactive lymph node, stage I, II and III of DLBCL. Arg expression was different between all groups except for between stage III and VI of DLBCL.Conclusion: The observed changes in Arg expression is a potential biomarker for DLBCL staging. In addition specific inhibitors of Arg can be considered as new chemotherapy agents in the DLBCL treatment.

gate Induced Drain Leakage (GIDL) current is one of the main leakage current components in Silicon on Insulator (SOI) MOSFET structure and plays an important role in the data retention time of DRAM cells. GIDL can dominate the drain leakage current at zero bias and will limit the scalability of the structure for low power applications. In this paper we propose a novel technique for reducing GIDL and hence off-state current in the nanoscale single gate SOI MOSFET structure. The proposed structure employs asymmetric gate oxide thickness, which can reduce GIDL current, and hence Ioff current to about 98% in comparison with the symmetric gate oxide thickness structure, without sacrificing the driving current and losing gate control over the channel. This technique is very simple in the fabrication point of view in CMOS technology.

Today more than ever, we need high-speed circuits with low occupancy and low power as an alternative to CMOS circuits. Therefore, we proposed a new path to build nanoscale circuits such as Quantum-dot Cellular Automata (QCA). This technology is always prone to failure due to its very small size. Therefore, designers always try to design fault-tolerant gates and provide methods to increase the reliability of QCA. By adding redundant cells, the possibility of some defects such as cell omission and cell addition is somewhat reduced. However, in the face of defects such as stuck-at 0/1 faults, Clock fault and bridging fault. We can greatly increase the fault tolerance by appropriate placement and using fault tolerant gates with a suitable structure. In this paper, we design the XOR/XNOR gate with the approach of preventing stuck-at 0/1 fault, clock fault, and bridging fault using the first NNI gate tolerating cell addition fault.

Problems related to sedimentation and depositions can be minimized by using a system where weirs and gate are combined in open canals while the floated materials run over and sediments run under the structure. Because of effect of overflow on underflow, the variation rate of dischArge coefficient with geometric and hydraulic parameters is different with their use each other separately. It is important for cylindrical weir-gate because the flow nape will sit on the weir completely the current work describes the results of experimental investigation on effect of weir flow on gate dischArge coefficient for cylindrical weir-gate. In this way the gate dischArge is measured against upstream water depth in two condition of weir flow and without weir flow. The experiments are carried out in a laboratory flume 10 m length, 60 cm wide and 70 cm height. Results indicate that increasing dimensionless parameters of Hw/a and Hw/D cause decreasing the dischArge coefficient for weir flow and it rises about 1-25% without weir flow. For a constant values of the Hw/a increasing the gate height, the effect of weir on gate dischArge coefficient decreases for the cylindrical weir-gate.

This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise mArgin as well as gain. It is also found that delay performance of the inverter circuit also gets upgraded slightly by using high-k gate dielectric materials. Further, it is observed that the scaling down of channel thickness (TSi) improves the noise mArgin (NM), and gain (A) at the cost of propagation delay (Pd). Moreover, it is also observed that the changes in noise mArgin (Δ, NM = NM(K=40) –,NM(K=3. 9)), propagation delay (Δ, Pd = Pd (K=40) –,Pd (K=3. 9)), and gain (Δ, A = A(K=40) –,A(K=3. 9)) gets hinder at lower TSi. Therefore, it is apposite to look at lower channel thickness (~6 nm) while designing high-k gate dielectric-based DG-MOSFET for CMOS inverter cell.

In the history of Iranian territory, attention towards defensive fortifications has always ambitiously been concerned as an important factor for survival of the residential and governmental centers. Detailed and precise focusing on each of these defensive structures will provide useful information on the characteristics of this type of military architecture. An MW 6. 5 earthquake devastated the town of Bam in southeast Iran on 26 December 2003. After the Bam earthquake, attentions have been attracted towards Arg-e-Bam complex which had been extensively damaged, and methodical studies were initiated in various parts of this world heritage site. The citadel is located on the northeast of Bam, a dependency of Kerman province located 193 kilometers southeast of Kerman (the province center) and 1257 kilometers southeast of Tehran. The citadel consists of two main areas, the ruler’ s seat and the commoners’ area, which are separated by walls and watchtowers. Another wall, lined by a moat, runs approximately 2, 000 meters around this ensemble, separating it from the surrounding fields. Hence, the present study was being carried out from 2005 to 2008, and aimed at introducing and recognizing the main structure of Arg-e-Bam defense system. In this research which has based on a scientific viewpoint and a logical analysis focusing on findings, elements observations and architectural bodies obtained from a part of the fence between towers (8) and (9) on the southern (main) front up to reaching the ditch and also from new-found parts of the fence body, it has been shown that the image formed in pictures, reports and public opinion about the nature of Bam citadel defensive structure was actually a part of it, as a volume of accumulated historical debris caused by demolitions and reconstructions during the past centuries, which can be seen as a ramp adjacent to the fence up to reaching the ditch and around all sides of the citadel. Understanding the physical situation and constituting layers of this massive defensive structure at the corner of Lut Desert will be useful for researchers not only to know about the architectural aspects, but also to better understand the socio-political conditions of governmental structures during different historical periods in this area. According to the revision of Arg-e-Bam defensive fortifications based on the field studies and explorations, new-found parts include an extensive wall located between the ditch and the fence wall with a height of 2. 7 m, which is lArger than the human size, and the ramp which is elevated from the top of this wall to fence base, expressing its defensive role as an obstacle preventing the invaders from easy access to the fence side, and stressing on its role as an strengthening element for retrofitting the citadel defensive wall structure from the structural engineering viewpoint. Evaluating the natural ground bed of the area and the artificial effects created by human activities on the area, detailed studying and scientific perceptions about the manner of positioning and distribution of various defensive elements relative to each other, and detecting the level differences between Sharestan (public stand) bed, fence and fortifications, ditch and the natural ground bed around the complex indicate that there have been extensive changes in the complex area in order to construct the spaces and architectural body of Arg-e-Bam complex as a world heritage site. Findings have suggested the use of ground bed soil as brick and clay materials for the construction of Bam structures and its architectural components. This study has been accompanied with field exploration, mapping and analysis of findings, along with a reviewing of the books and documents available on Bam and defensive fortifications and structures, and with the guidance given by experts.